Recent Advances in the Bias Stress Stability of Organic Transistors
Advanced Functional Materials 2020, 30, 1904590.
Research overview
This review examines why organic transistors lose stability during prolonged electrical bias. It connects charge-trapping measurements with the roles of semiconductor layers, gate insulators, and electrical contacts, then discusses materials and interface strategies for reducing bias-stress degradation.
Summary based on the publisher-deposited abstract.
See Also
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- [Paper]Nanomorphology Dependence of the Environmental Stability of Organic Solar Cells (2022)
- [Paper]Structural Insights into Conjugated Polymers for Stretchable Organic Transistors (2024)
- [Paper]Accompanying Structural Transformations in Polarity Switching of Heavily Doped Conjugated Polymers (2025)
- [Paper]Strain-Dependent Charge Trapping and Its Impact on the Operational Stability of Polymer Field-Effect Transistors (2024)
- [Paper]Enhancing Mechanical Deformability of Rigid Conjugated Polymers through Functional Additive-Induced Persistence Length Modulation (2025)
- [Paper]Protonated Organic Semiconductors: Origin of Water-Induced Charge-Trap Generation (2023)
- [Paper]Solutal-Marangoni-Flow-Mediated Growth of Patterned Highly Crystalline Organic Semiconductor Thin Film via Gap-Controlled Bar Coating (2021)